Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films

Near-infrared femtosecond laser crystallized poly-Si thin film transistors.

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those o...

Substrate temperature effects on laser crystallized NiTi thin films

Amorphous sputter-deposited NiTi thin films were subjected to pulsed, melt-mediated laser crystallization techniques to engineer their microstructure. The effects of laser processing of preheated films are examined. Laser processing of films at an elevated substrate temperature has a significant effect on the rate with which solidification occurs. It is observed that the preheating temperature ...

Epitaxial ternary RexMo1-xSi2 thin films on Si(100)

Reactive deposition epitaxy was used to synthesize thin layers of RexMo1 _ _x8i2 on Si(lOO). In the case of x= 1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 ( 1990) ]. In the case of x = 0, however, virtually no alignment of the MoSi2 and the s...

Constrained Grain Boundary Diffusion in Thin Copper Films

Dynamics of the solidification of laser-annealed Si thin films

Nanosccond time-resolved reflectivity and transmis~ion measurements are uscd for the observation of solidification phenomena, following incornpletc or complete rneltrng of thin Si films ( d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as Tong as the film is not melted completely. OR complete melting of the film, nucleation in the liqu...